Accession Number : ADA207569


Title :   Final Report: High Power Semiconductor Laser Sources,


Corporate Author : CALIFORNIA INST OF TECH PASADENA


Personal Author(s) : Yariv, A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a207569.pdf


Report Date : Jan 1989


Pagination or Media Count : 93


Abstract : The main purpose of the research was to design a nd fabricate a surface emitting semiconductor laser based on multi quantum well amplification. During the contract period we have succeeded in improvement of the basic quantum well active medium so as to result in maximum gain for a given inversion density and have analyzed the fabrication of GaAs/GaAlAs multilayer dielectric reflectors for providing the optical feedback to the surface emitting semiconductor laser. We have also made significant progress in the development of diffusion techniques to provide the p and n regions adjacent to the active region for carrier injection. With continued effort and support we should stand a fair chance of realizing an operating surface emitting semiconductor laser. Keywords: Heterojunctions; Semiconductor lasers; Gallium arsenide, Aluminum gallium arsenide, Quantum wells.


Descriptors :   *GALLIUM ARSENIDE LASERS , *INJECTION LASERS , *SEMICONDUCTOR LASERS , ALUMINUM GALLIUM ARSENIDES , AMPLIFICATION , DENSITY , DIFFUSION , EMISSION , FEEDBACK , GAIN , GALLIUM ARSENIDES , INJECTION , INVERSION , QUANTUM ELECTRONICS , QUANTUM THEORY , REGIONS , SURFACES


Subject Categories : Solid State Physics
      Lasers and Masers


Distribution Statement : APPROVED FOR PUBLIC RELEASE