Accession Number : ADA193359


Title :   Silicon-on-Insulator Pin Diodes.


Descriptive Note : Final technical rept. Mar 86-Jul 87,


Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS E NGINEERING


Personal Author(s) : Maby, Edward W ; Gutmann, Ronald J ; Letavic, Ted ; Wu, Stephen


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a193359.pdf


Report Date : Dec 1987


Pagination or Media Count : 107


Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs. Moreover, at frequencies below 10 GHz, where substrate area requirements can be extensive, the silicon-on-insulator substrate technology can be less expensive. The research program stresses recrystallization of silicon-on-alumina films, followed by growth of silicon epitaxial layers and fabrication of surface-oriented PIN diodes. In the second year of the program, we have accomplished the following: (1) Recrystallization of silicon-on-alumina with various encapsulation and stress-relief layers, using both an electron-beam system and a graphite strip heater; (2) Evaluation of the effect of stress on film quality, which indicates directions for improved device-quality films; (3) Design and initial fabrication of surface-oriented PIN diodes on single crystal silicon to demonstrate device design concept; (4) Evaluation of future directions for the research program. This report covers the second-year results. Particularly noteworthy is the first recrystallization of silicon-on-alumina films and the first fabrication of surface-oriented PIN diodes with doped polysilicon handles for P+ and N+ injecting contacts.


Descriptors :   *PHASE SHIFT CIRCUITS , *PIN DIODES , *SILICON , ELECTRON BEAMS , ENCAPSULATION , EPITAXIAL GROWTH , INSERTION LOSS , INTEGRATED CIRCUITS , MICROWAVE EQUIPMENT , MONOLITHIC STRUCTURES(ELECTRONICS) , RECRYSTALLIZATION , SINGLE CRYSTALS , STRESS RELIEVING


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE