Accession Number : ADA189673
Title : Gallium Arsenide and Related Compounds, 1986.
Descriptive Note : Final rept. 1 Aug 86-30 Jul 87,
Corporate Author : ILLINOIS UNIV CHAMPAIGN
Personal Author(s) : Lindley, W T
Report Date : Jan 1986
Pagination or Media Count : 520
Abstract : The 13th International Symposium on Gallium Arsenide and Related Compounds was held in Las Vegas, Nevada from September 28 through Oct 1, 1986. There were 360 participants from 15 countries. There were 180 regular papers and 16 late news papers submitted from which the Technical Program Committee selected 91 regular papers and 8 late news papers to be presented at the conference. The significant recent growth and development of the field is well illustrated by the scope of the papers printed included are: bulk growth, epitaxial growth, characterization, processing, quantum wells, optoelectronic devices and high-speed devices.
Descriptors : *ELECTROOPTICS , *GALLIUM ARSENIDES , *CRYSTAL GROWTH , *ELECTRONIC EQUIPMENT , EPITAXIAL GROWTH , NEVADA , QUANTUM ELECTRONICS , DOPING , ION IMPLANTATION , VAPOR DEPOSITION , SEMICONDUCTORS , FIELD EFFECT TRANSISTORS , SYMPOSIA
Subject Categories : Crystallography
Solid State Physics
Electrooptical and Optoelectronic Devices
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE