Accession Number : ADA176857
Title : Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).
Descriptive Note : Technical rept.,
Corporate Author : AEROSPACE CORP EL SEGUNDO CA SPACE SCIENCES LAB
Personal Author(s) : Browning,J S ; Koga,R ; Kolasinski,W A
Report Date : 30 Sep 1986
Pagination or Media Count : 30
Abstract : A radiation-hardened 16K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.
Descriptors : *IONS , *RANDOM ACCESS COMPUTER STORAGE , *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS , *KRYPTON , MEASUREMENT , SPACE TECHNOLOGY , DETECTION , CELLS , RESISTANCE , RATES , ESTIMATES , HIGH ENERGY , FEEDBACK , ERRORS , CROSS SECTIONS , LABORATORY PROCEDURES , STATICS , HARDENING , DEEP SPACE , COSMIC RAYS
Subject Categories : Computer Hardware
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE