Accession Number : ADA174155


Title :   Small Structures and Superlattices for Future High-Speed Devices


Descriptive Note : Annual technical rept. 15 Nov 1983-1 Oct 1986


Corporate Author : CALIFORNIA INST OF TECH PASADENA DEPT OF APPLIED PHYSICS


Personal Author(s) : McGill, T C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a174155.pdf


Report Date : 01 Oct 1986


Pagination or Media Count : 88


Abstract : Novel microstructures for high speed and high density electronics are studied with simulations on five new three terminal devices fabricated one of these new device structures and have measured the DC current voltage characteristics. The desired three terminal device behavior has been observed at 300K and 77K. Completed the installation of a picosecond pulser and in the process of obtaining some of the first measurements of the response time of tunneling devices. A capability to simulate the process of making high speed measurements with microstrip lines is developed. This simulation capability will be essential in interpreting the results of the high speed measurements. The development of a small Si MBE growth chamber is completed and silicide-silicon structures are being grown in this system. Installing a unique MBE facility that will include provision for growing group IV semiconductors and silicides, III-V semiconductors. analyzing structures, using Auger and ESCA. and a metallization chamber that includes not only the provision for evaporating metals but can be used as an intro-chamber for a more extensive processing facility. This facility is unique in the world but is serving as a prototype for systems planned by other groups. Some basic studies of the properties of GaAs-GaA1As interfaces that are basic to their use in novel device structures have been carried out.


Descriptors :   *SOLID STATE ELECTRONICS , *SUBMINIATURE ELECTRONIC EQUIPMENT , ALUMINUM GALLIUM ARSENIDES , COPPER COMPOUNDS , EPITAXIAL GROWTH , GALLIUM ARSENIDES , MOLECULAR BEAMS , PULSE GENERATORS , SCHOTTKY BARRIER DEVICES , SEMICONDUCTOR JUNCTIONS , SILICIDES , SILICON , STRIP TRANSMISSION LINES , THERMAL PROPERTIES , TUNNELING(ELECTRONICS)


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE