Accession Number : ADA160403


Title :   Chemical Bonding, Interdiffusion and Electronic Structure at InP, GaAs, and Si-Metal Interfaces.


Descriptive Note : Summary rept. 1 Oct 84-30 Sep 85,


Corporate Author : XEROX WEBSTER RESEARCH CENTER NY


Personal Author(s) : Brillson,L J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a160403.pdf


Report Date : 01 Oct 1985


Pagination or Media Count : 266


Abstract : An experimental program investigates the interface electronic states and band structure at Germanium Arsenides, Indium Phosphides and Silicon-metal interfaces formed by chemical reaction and interdiffusion at room temperature, elevated temperatures, as well as following pulsed-laser annealing; uses soft x-ray photoemission spectroscopy (SXPS) and Auger electron spectroscopy (AES)/depth profiling to characterize atomic redistribution and new chemical bonding near the surfaces and interfaces on an atomic scale; refines the technique of cathodoluminescence spectroscopy (CLS) for investigations of new compound and defect formation at buried metal-semiconductor interfaces; and employs temperature-dependent current-voltage and capacitance-voltage measurements to characterize the electronic properties and spatial distribution of interface states of metal-InP interfaces prepared and processed under carefully controlled conditions. The work can be grouped into four areas: 1) chemical and electronic structure of buried III-V and II-VI compound semiconductor-metal interfaces, 2) localized chemical reactions at Aluminum interfaces with III-V compound semiconductors promoted by pulsed-laser annealing as well as laser-induced oxidation of Si, 3) eletrical characterization of the UHV-prepared Al-InP (110) interface, and 4) control of competitive Ti-Si and Ti-SiO2 interfacial reactions by rapid thermal annealing.


Descriptors :   *METALS , *SEMICONDUCTORS , *CHEMICAL BONDS , SPATIAL DISTRIBUTION , MEASUREMENT , TEMPERATURE , ANNEALING , SPECTROSCOPY , INTERFACES , HIGH TEMPERATURE , VOLTAGE , LASERS , DEPTH , ROOM TEMPERATURE , DEFECTS(MATERIALS) , PROFILES , OXIDATION , ELECTRONIC STATES , X RAY PHOTOELECTRON SPECTROSCOPY , ALUMINUM , CHEMICAL REACTIONS , ARSENIDES , GROUP III COMPOUNDS , GROUP IV COMPOUNDS , GROUP V COMPOUNDS , MOLECULAR STRUCTURE , DIFFUSION , CATHODOLUMINESCENCE , ELECTRIC CURRENT , SILICON COMPOUNDS , INDIUM PHOSPHIDES , GERMANIUM , AUGER ELECTRON SPECTROSCOPY , THERMAL RADIATION , CAPACITANCE


Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE