Accession Number : ADA155730


Title :   Striation Free Doped Silicon.


Descriptive Note : Final rept. 1 Sep 81-1 Sep 84,


Corporate Author : HUGHES RESEARCH LABS MALIBU CA


Personal Author(s) : Robertson,G D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a155730.pdf


Report Date : Dec 1984


Pagination or Media Count : 154


Abstract : The growth of float zone doped silcon crystals in the presence of strong magnetic fields has been investigated. Fields of 5000 G, oriented both transverse to and along the growth axis, have produced dopant distributions in Ga-doped Si that have not been observed previously. Reductions of dopant concentration fluctuations by factors of three have been seen for strong axial fields. In the transverse fields, the dopant distributions are quite different from those obtained in normal growth, but the fluctuations are not appreciably reduced. However, the growth of crystals without rotation is stabilized by the transverse field and this stabilization makes possible the study of fine striae in the absence of rotational striae. Such studies promise insight into the physics of the float zone process. On the other hand, the axial field appears to destabilize growth, especially at low rotation rates. Further work with the axial field is needed to develop growth techniques which will allow us to capitalize on the uniform dopant distributions that it provides.


Descriptors :   *CRYSTAL STRUCTURE , *SILICON , *DOPING , MAGNETIC FIELDS , GROWTH(GENERAL) , CRYSTALS , ROTATION , LOW RATE , STRIATIONS , TRANSVERSE , ZONE MELTING


Subject Categories : Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE