Accession Number : ADA135896


Title :   Theoretical and Experimental Investigation of Heterojunction Interfaces


Descriptive Note : Final rept. 1 Sep 1976-30 Jun 1983


Corporate Author : ROCKWELL INTERNATIONAL ANAHEIM CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER


Personal Author(s) : Kraut, E A ; Grant, R W ; Waldrop, J R ; Kowalczyk, Steven P ; Harrison, W A ; F P Bundy, ; Miller, D L ; Dunn, K J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a135896.pdf


Report Date : Nov 1983


Pagination or Media Count : 73


Abstract : A technique based on the use of x-ray photoelectron spectroscopy was developed to measure heterojunction band discontinuities with an uncertainty of + or - 0.04 eV and changes in band discontinuities for a specific heterojunction interface with an uncertainty of + or - 0.01 eV. This technique was used to investigate Ge-GaAs, GaAs-A1As, ZnSe-GaAs, and ZnSe-Ge heterojunctions. It was discovered that microscopic dipoles present at abrupt heterojunction interfaces can substantially affect observed band discontinuities. Variations in heterojunction band discontinuities as functions of crystallographic orientation, growth sequence, and growth conditions were observed. It was established that heterojunction band discontinuities depend on microscopic properties of the interface and cannot be predicted from individual semiconductor properties alone. Based on electrostatic considerations, it was shown that polar heterojunction interfaces cannot be atomically abrupt but must require at least two interfacial transition planes to be consistent with experimental observations.


Descriptors :   *BAND THEORY OF SOLIDS , *HETEROJUNCTIONS , *INTERFACES , *POLAR REGIONS , *SEMICONDUCTORS , CRYSTALS , ENVIRONMENTS , FUNCTIONS , GALLIUM ARSENIDES , GERMANIUM , GROWTH(GENERAL) , ORIENTATION(DIRECTION) , PHOTOELECTRIC EFFECT , SINGLE CRYSTALS , X RAYS


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE