Accession Number : ADA133402


Title :   Fabrication and Properties of Multilayer Structures


Descriptive Note : Final technical rept. 1 Sep 1981-30 Sep 1982


Corporate Author : STANFORD UNIV CA DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Tiller, William A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a133402.pdf


Report Date : Sep 1983


Pagination or Media Count : 50


Abstract : The synthesis of SiC films and Pd2Si films via single source and dual source sputtering, respectively, has been experimentally investigated while the reactive sputter deposition of SiO sub x films has been theoretically analyzed. The SiO sub x film data requires a mobile precursor adsorption process to be operative for the oxygen and an oxygen sticking coefficient of between 1.56 x 10 to the minus 3rd power and 4.17 x 10 to the minus 3rd power. An analysis of in- situ electrical diagnostics of the films via a non-contact technique shows the method to be of marginal accuracy for the example selected. An important new formulation of the stress and elastic constant tensors in the vicinity of interfaces has been developed and applied to the simple example of adsorbed layer/substrate interactions via a parametric analysis. Atomic modeling of the SiO system yields peroxide bond formation for oxygen-rich (100) alpha- cristobalite surfaces. Radial distribution function and angular distribution function data have been calculated for bulk alpha-quartz and bulk alpha- cristobalite in good agreement with experiment.


Descriptors :   *FABRICATION , *SEMICONDUCTING FILMS , COMPUTERIZED SIMULATION , ELECTRICAL PROPERTIES , INTEGRATED CIRCUITS , INTERSTITIAL , LAYERS , OXIDATION , PALLADIUM COMPOUNDS , SILICON CARBIDES , SPUTTERING , SYNTHESIS(CHEMISTRY)


Subject Categories : Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE