Accession Number : ADA125942
Title : Camel Gate Field Effect Transistors.
Descriptive Note : Technical rept.,
Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Personal Author(s) : Thorne,Robert Edward
Report Date : Jan 1983
Pagination or Media Count : 53
Abstract : An alternative field effect transistor (FET) structure to the junction FET (JFET) and the metal-semiconductor FET (MESFET), the camel gate FET (CAMFET), is described. This device uses the voltage-variable depletion width of a camel disode for modulating the channel current. By varying the structural parameters of the CAMET, a wide variety of FET characteristics may be obtained. CAMFETSs can be designed to yield relatively voltage independent transconductances, large for ward turn-on voltages, and large gate-drain breakdown voltages, all of which are desirable in large signal applications. CAMFETs with large transconductances. desirable in logic applications, may also be obtained. Together with ease of fabrication and potentially improved reliabilities and yields, the many advantagesof CAMFETs appear to point to a promising future in both discrete and large scale integrated circuit applications.
Descriptors : *FIELD EFFECT TRANSISTORS , DIODES , DEPLETION , THESES , GATES(CIRCUITS) , FABRICATION , MICROWAVE EQUIPMENT , ELECTRICAL PROPERTIES , DEPTH , INTERNAL , SEMICONDUCTOR JUNCTIONS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE