Accession Number : ADA124428


Title :   Swept Line Electron Beam Annealing of Ion Implanted Semiconductors.


Descriptive Note : Technical rept.,


Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB


Personal Author(s) : Soda,Kenneth James


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a124428.pdf


Report Date : Jul 1982


Pagination or Media Count : 132


Abstract : The capabilities of a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior to those achievable by conventional furnace annealing. Residual point defects in self-implanted amorphous silicon treated by SLEB and furnace processes are examined by Deep Level Transient Spectroscopy.


Descriptors :   *ANNEALING , *ION IMPLANTATION , *ELECTRON BEAMS , *SILICON , PHASE TRANSFORMATIONS , GALLIUM ARSENIDES , PHOTOLUMINESCENCE , AMORPHOUS MATERIALS , CRYSTALS , SEMICONDUCTORS , ELECTRICAL PROPERTIES , IMPURITIES , NITROGEN , CRYSTAL DEFECTS , FLUORIDES , GALLIUM PHOSPHIDES , BORON COMPOUNDS


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE