Accession Number : ADA091372


Title :   RAM Technology Study.


Descriptive Note : Topical rept. 1 Feb-31 Dec 79,


Corporate Author : MISSION RESEARCH CORP LA JOLLA CA


Personal Author(s) : Raymond,James P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a091372.pdf


Report Date : 03 Jan 1980


Pagination or Media Count : 57


Abstract : Electrical performance and radiation hardness parameters of modern RAM technologies were compared for consideration in military hardened system applications. Semiconductor technologies considered included production dynamic n-MOS, statis n-MOS, CMOS, bipolar ECL developing CMOS/SOS and bipolar I2L. For the production technologies CMOS and bipolar ECL are clear candidates for hardened systems with limited application for static n-MOS and very limited application for dynamic n-MOS. (Author)


Descriptors :   *RANDOM ACCESS COMPUTER STORAGE , *RADIATION EFFECTS , READ WRITE MEMORIES , ELECTROMAGNETIC INTERFERENCE , MILITARY APPLICATIONS , COMPLEMENTARY METAL OXIDE SEMICONDUCTORS , BIPOLAR TRANSISTORS , RADIATION HARDENING


Subject Categories : Electrical and Electronic Equipment
      Computer Hardware
      Nuclear Radiation Shield, Protection & Safety
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE