Accession Number : ADA086345
Title : Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.
Descriptive Note : Final rept. 1 Jun 77-31 Dec 79,
Corporate Author : AUBURN UNIV ALA DEPT OF PHYSICS
Personal Author(s) : Budenstein,Paul P ; Baruah,Aradhana ; Knight,Edward R ; Liou,Fu-Tai
Report Date : 30 May 1980
Pagination or Media Count : 525
Abstract : Experiments were performed on thin films silicon-on-sapphire (SOS) diodes (p(+) - n - n(+)) to determine the roles of geometry and doping level (ten to the 15th power to ten to the 17th power atoms/cubic centimeters) on current configurations, second breakdown susceptibility, and damage morphology. Geometric parameters varied including diode width, n-region length, n-region doping density, diffusion spikes of different sizes and configurations on the n(+)n or p(+)n interfaces, contact spikes at the n(+)-metal and p(+)-metal interfaces, and a variety of other current concentration geometries. Prior to the present study, the effectiveness of junction defects in reducing resistance to second breakdown was not known. However, it was suspected that such defects might result in 'maverick' devices, that is, devices which fail much below their rated electrical parameters. SOS diodes, specially fabricated by Rockwell International, were tested using Sunshine's stroboscopic technique. This method exploits the decrease of the optical transmittancy of silicon with increasing temperature.
Descriptors : *SEMICONDUCTOR DIODES , *SAPPHIRE , *SILICON , *BREAKDOWN(ELECTRONIC THRESHOLD) , DAMAGE , INTERFACES , THIN FILMS , DEFECTS(MATERIALS) , MELTING , FILAMENTS , DOPING , SEMICONDUCTING FILMS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE