Accession Number : ADA085303


Title :   Free Surface Properties of III-V Compound Semiconductor Surfaces.


Descriptive Note : Final rept. 1 Apr 74-31 Mar 80,


Corporate Author : PRINCETON UNIV NJ


Personal Author(s) : Kahn,A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a085303.pdf


Report Date : Jun 1980


Pagination or Media Count : 20


Abstract : Studies of free compound semiconductor surfaces as well as gas-solid and metal-solid interaction are summarized. An experimental and theoretical analysis of the GaAs(110) surface reconstruction was conducted and applied to three additional compounds: InSb, InP and ZnTe. Attempts were made to relate the type and the magnitude of the surface reconstruction of these materials to the covalent-ionic character of the bonding. Knowledge of the atomic reconstructions of these surfaces was used to investigate the reactivity of semiconductor surfaces (GaAs(110)) with gas (oxygen) and metal (aluminum) atoms. These multicomponent systems are at the center of the author's essays to understand the chemistry of these surfaces and its relationship with their atomic reconstruction. Using Low Energy Electron Diffraction (LEED) as the principal tool to investigation, structural information has been obtained which correlates chemical and electronic information obtained by other surface analysis techniques. (Author)


Descriptors :   *SEMICONDUCTORS , *GROUP III COMPOUNDS , *GROUP V COMPOUNDS , *SURFACE CHEMISTRY , EXPERIMENTAL DATA , SURFACE ANALYSIS , ALUMINUM COMPOUNDS , INTERACTIONS , GALLIUM ARSENIDES , COVALENT BONDS , THEORY , ATOMS , OXYGEN , CHEMICAL BONDS , SURFACE PROPERTIES , ZINC TELLURIDES , MOLECULAR STRUCTURE , INDIUM PHOSPHIDES , INDIUM ANTIMONIDES


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE