Accession Number : ADA030968


Title :   Permanent and Transient Radiation Effects on Thin-Oxide (200-A) MOS Transistors


Descriptive Note : Technical rept.


Corporate Author : HARRY DIAMOND LABS ADELPHI MD


Personal Author(s) : Share, Stewart ; Martin, Robert A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a030968.pdf


Report Date : Jun 1976


Pagination or Media Count : 27


Abstract : An approach for hardening metal oxide semiconductor (MOS) transistors to ionizing radiation by reducing the thickness of the gate oxide is presented. It is shown that Si gate, n-channel MOS field-effect transistors with oxides 200 A thick continue to operate in the enhancement mode after irradiation to 1,000, 000 rads (Si) with a positive bias applied to the gate during the irradiation. This represents a considerable improvement over conventional thick-oxide (approximately 1000-A) devices, which go into the depletion mode of operation at 100,000 rads (Si). The thin-oxide devices after exposure to pulsed ionizing radiation showed improved performance over that of thick-oxide devices. It was found also that device operation following irradiation depended on the source- drain spacing (Channel length): Shortening the channel length leads to an increased shift of the threshold voltage induced by irradiation.


Descriptors :   *RADIATION DAMAGE , *MOSFET SEMICONDUCTORS , *RADIATION HARDENING , *METAL OXIDE SEMICONDUCTORS , *FIELD EFFECT TRANSISTORS , *TRANSIENT RADIATION EFFECTS , IRRADIATION , N TYPE SEMICONDUCTORS , SILICON , OXIDES , GATES(CIRCUITS) , IONIZATION


Subject Categories : Electrical and Electronic Equipment
      Nuclear Radiation Shield, Protection & Safety
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE