Accession Number:

AD1075344

Title:

A Multi-Time Programmable Memory Technology in a Native 14nm FINFET Process using Charge Trap Transistors (CTTs)

Descriptive Note:

Conference Paper

Corporate Author:

GLOBALFOUNDRIES Hopewell Junction United States

Report Date:

2019-03-25

Pagination or Media Count:

2.0

Abstract:

Described is a Multi-Time Programmable Memory MTPM solution, manufactured in a 14 nm bulk FINFET technology, which requires no process adders or additional masks, using Charge Trap Transistors CTTs. Outlined are the technological breakthroughs required to support multi-time program and erase of CTTs for this secure embedded nonvolatile memory eNVM technology. For the first time, hardware results demonstrate an endurance of 103 ProgramErase cycles. Data retention lifetime of 10 years at 125 deg C and scalability to 7 nm has been confirmed.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE