Accession Number : AD1051172


Title :   Ga- and N-polar GaN Growths on SiC Substrate


Descriptive Note : Technical Report,30 Sep 2014,29 Sep 2017


Corporate Author : National Taiwan University Taipei Taiwan


Personal Author(s) : Yang,Chih-Chung


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1051172.pdf


Report Date : 15 Mar 2018


Pagination or Media Count : 53


Abstract : The growth of a two-section, core-shell, InGaN/GaN quantum-well (QW) nanorod- (NR-) array light-emitting diode device based on a pulsed growth technique with metalorganic chemical vapor deposition (MOCVD) is demonstrated. A two-section n-GaN NR is grown through a tapering process for forming two uniform NR sections of different cross-sectional sizes. The cathodoluminescence (CL), photoluminescence (PL), and electroluminescence (EL) characterization results of the two-section NR structure are compared with those of a single-section NR sample, which is prepared under the similar condition to that for the first uniform NR section of the two-section sample. All the CL, PL, and EL spectra of the two-section sample (peaked between 520 and 525 nm) are red-shifted from those of the single-section sample (peaked around 490 nm) by 30 nm in wavelength. Also, the emitted spectral widths of the two-section sample become significantly larger than their counterparts of the single-section sample. The PL spectral full-width at half-maximum increases from 37 to 61 nm. Such variations are attributed to the higher indium incorporation in the sidewall QWs of the two-section sample due to the stronger strain relaxation in an NR section of a smaller cross-sectional size and the more constituent atom supply from the larger gap volume between neighboring NRs.


Descriptors :   nanotechnology , crystal structure , quantum wells , nanoparticles , surface plasmon resonance , scanning electron microscopy , quantum efficiency , light emitting diodes , emission spectra , chemical vapor deposition , solar cells , SUBSTRATES , GALLIUM NITRIDES


Subject Categories : Physical Chemistry


Distribution Statement : APPROVED FOR PUBLIC RELEASE