Accession Number : AD1051113

Title :   Silicon-Based Examination of Gamma-Ray and Neutron Interactions with Solid State Materials

Descriptive Note : Technical Report,01 Dec 2006,01 Dec 2011

Corporate Author : University of Michigan Ann Arbor United States

Personal Author(s) : Hammig, Mark

Full Text :

Report Date : 02 May 2018

Pagination or Media Count : 68

Abstract : The objective of the research was to develop a fundamental understanding of the processes by which charge carriers interact in semiconductor materials in order to aid in the development of advanced radiation detection materials. During the first three years of the research, our focus was primarily on silicon, using a relatively well-behaved semiconductor as a material basis from which we can understand those physical principles that can impair the contact behavior and affect the charge transport. That information has been applied to single-crystal cadmium-zinc-telluride (CZT) and lead chalcogenide (PbS, PbSe, PbTe) nanocrystalline solids, with particular focus on the nanostructured materials during the latter two Phases of the work. During the research, we endeavored to develop general techniques by which charge creation is maximized and impediments to its transit are minimized, and to apply those techniques to the most favorable material systems.

Descriptors :   SOLID STATE CHEMISTRY , semiconductors , electrons , crystal structure , gamma rays , charge carriers , quantum dots , ionizing radiation , nanotechnology , composite materials , monte carlo method , conductive polymers , alpha particles , TELLURIDES , CADMIUM COMPOUNDS , zinc compounds , SILICON , neutrons

Subject Categories : Electrical and Electronic Equipment
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE