Accession Number : AD1050680

Title :   Ballistic Deflection Transistors for THz Amplification

Descriptive Note : Technical Report,28 Sep 2012,27 Sep 2016

Corporate Author : University of Rochester Rochester United States

Personal Author(s) : Sobolewski, Roman ; Wu,Hui

Full Text :

Report Date : 09 May 2016

Pagination or Media Count : 11

Abstract : The main objective of this collaborative project, between the University of Massachusetts Lowell and the University of Rochester, has been development of novel THz-bandwidth nanostructures based on room temperature, ballistic electron transport in 2-dimensional electron gas in III-V semiconductors. We have been working on amplifier structures using ballistic deflection transistors (BDTs) and initiated research on self-switching diodes (SSDs) that are unique planar nanostructures with diode-like characteristics.

Descriptors :   electromagnetic radiation , bandwidth , amplifiers , optical properties , semiconductors , solar cells , single crystals , simulations , spectroscopy , films , electron gas , transistors , nanostructures , PHOTONICS , BALLISTICS , TERAHERTZ RADIATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE