Accession Number : AD1050680


Title :   Ballistic Deflection Transistors for THz Amplification


Descriptive Note : Technical Report,28 Sep 2012,27 Sep 2016


Corporate Author : University of Rochester Rochester United States


Personal Author(s) : Sobolewski, Roman ; Wu,Hui


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1050680.pdf


Report Date : 09 May 2016


Pagination or Media Count : 11


Abstract : The main objective of this collaborative project, between the University of Massachusetts Lowell and the University of Rochester, has been development of novel THz-bandwidth nanostructures based on room temperature, ballistic electron transport in 2-dimensional electron gas in III-V semiconductors. We have been working on amplifier structures using ballistic deflection transistors (BDTs) and initiated research on self-switching diodes (SSDs) that are unique planar nanostructures with diode-like characteristics.


Descriptors :   electromagnetic radiation , bandwidth , amplifiers , optical properties , semiconductors , solar cells , single crystals , simulations , spectroscopy , films , electron gas , transistors , nanostructures , PHOTONICS , BALLISTICS , TERAHERTZ RADIATION


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE