Accession Number : AD1050178


Title :   GeSn Based Near and Mid Infrared Heterostructure Detectors


Descriptive Note : Technical Report,27 Jun 2016,26 Dec 2017


Corporate Author : UNIVERSITY OF MASSACHUSETTS BOSTON United States


Personal Author(s) : Sun,Greg


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1050178.pdf


Report Date : 07 Feb 2018


Pagination or Media Count : 11


Abstract : This final report presents results obtained during the period of June 27th, 2016 to December 26, 2018 for the basic research project intended to advance the science and technology of Si photonics based on SiGeSn material system with focus on near and mid infrared GeSn detectors and focal plane arrays that operate from 1.5 to around 2.0 micron wavelength range. During this period, we have strengthened our existing collaborations with Prof. Cheng group at National Taiwan University, Dr. Hendrickson at Air Force Research Laboratories, and Prof. Yus group at University of Arkansas. We have made innovative contributions to the material development and device development that directly impact the areas of group IV photonics for mid-infrared applications. Results were published in prestigious journals. This report will highlight a few significant contributions.


Descriptors :   silicon photonics , optoelectronics , band gaps , photoluminescence , complementary metaloxide semiconductors , Photodetectors , light emitting diodes , Photodiodes


Subject Categories : Properties of Metals and Alloys
      Electrooptical and Optoelectronic Devices
      Properties of Metals and Alloys
      Electrooptical and Optoelectronic Devices


Distribution Statement : APPROVED FOR PUBLIC RELEASE