Accession Number : AD1049912


Title :   Assessment of Phosphorene Field-Effect Transistors


Descriptive Note : Technical Report,01 Jul 2014,30 Jun 2017


Corporate Author : Lehigh University Bethlehem United States


Personal Author(s) : Hwang,James C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1049912.pdf


Report Date : 28 Jan 2018


Pagination or Media Count : 6


Abstract : During the project period, phorsphorene field-effect transistors (FETs) were successfully passivated with atomic-layer deposited Al2O3 and proven to be stable for at least three months in room air. Meanwhile, the FET design evolved from long back-gated channels on conducting substrates that could be assessed only under direct-current conditions, to submicron top-gated channels that could operate at microwave frequencies under both small-signal and large-signal conditions. Further, CMOS-compatible submicron buried-gate structures were designed. However, lacking large-area phosphorene layers, the design was demonstrated only on monolayer MoS2 grown by chemical vapor deposition.


Descriptors :   Field Effect Transistors , dielectrics , semiconductors , thermal stability , passivation (metallurgy) , substrates , layers , chemical vapor deposition , phosphorus , fabrication


Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy


Distribution Statement : APPROVED FOR PUBLIC RELEASE