Accession Number : AD1049912

Title :   Assessment of Phosphorene Field-Effect Transistors

Descriptive Note : Technical Report,01 Jul 2014,30 Jun 2017

Corporate Author : Lehigh University Bethlehem United States

Personal Author(s) : Hwang,James C

Full Text :

Report Date : 28 Jan 2018

Pagination or Media Count : 6

Abstract : During the project period, phorsphorene field-effect transistors (FETs) were successfully passivated with atomic-layer deposited Al2O3 and proven to be stable for at least three months in room air. Meanwhile, the FET design evolved from long back-gated channels on conducting substrates that could be assessed only under direct-current conditions, to submicron top-gated channels that could operate at microwave frequencies under both small-signal and large-signal conditions. Further, CMOS-compatible submicron buried-gate structures were designed. However, lacking large-area phosphorene layers, the design was demonstrated only on monolayer MoS2 grown by chemical vapor deposition.

Descriptors :   Field Effect Transistors , dielectrics , semiconductors , thermal stability , passivation (metallurgy) , substrates , layers , chemical vapor deposition , phosphorus , fabrication

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE