Accession Number : AD1048837


Title :   Advanced Electronics


Descriptive Note : Technical Report,01 Oct 2015,05 Apr 2017


Corporate Author : Air Force Research Laboratory, Space Vehicles Directorate Kirtland AFB United States


Personal Author(s) : Sharma,Ashwani


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1048837.pdf


Report Date : 21 Jul 2017


Pagination or Media Count : 18


Abstract : The Space Electronics Technology Branch (RVSW) is conducting a first time experimental and theoretical investigation focused on evaluating new physical phenomena in the quasi-quantum regime in which the hole mobility tends to exceed the electron mobility, and the electron reaches the group velocity in 2-D materials. These phenomena are due to a dramatic reduction of the holes effective mass resulting from combined effects of two dimensional confinement coupled with strain/tensile effects, and due to the electron wave function not being able to penetrate the barrier regions in 2D materials.


Descriptors :   transport properties , layers , electron mobility , tensile strain , holes (electron deficiencies) , silicon on insulator , reactive ion etching , lithography , scanning electron microscopy , charge carriers , voltage , photoconductivity , thickness , complementary metaloxide semiconductors , velocity


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE