Accession Number : AD1048837

Title :   Advanced Electronics

Descriptive Note : Technical Report,01 Oct 2015,05 Apr 2017

Corporate Author : Air Force Research Laboratory, Space Vehicles Directorate Kirtland AFB United States

Personal Author(s) : Sharma,Ashwani

Full Text :

Report Date : 21 Jul 2017

Pagination or Media Count : 18

Abstract : The Space Electronics Technology Branch (RVSW) is conducting a first time experimental and theoretical investigation focused on evaluating new physical phenomena in the quasi-quantum regime in which the hole mobility tends to exceed the electron mobility, and the electron reaches the group velocity in 2-D materials. These phenomena are due to a dramatic reduction of the holes effective mass resulting from combined effects of two dimensional confinement coupled with strain/tensile effects, and due to the electron wave function not being able to penetrate the barrier regions in 2D materials.

Descriptors :   transport properties , layers , electron mobility , tensile strain , holes (electron deficiencies) , silicon on insulator , reactive ion etching , lithography , scanning electron microscopy , charge carriers , voltage , photoconductivity , thickness , complementary metaloxide semiconductors , velocity

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE