Accession Number : AD1044668


Title :   Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates


Descriptive Note : Technical Report,01 Jan 2017,09 Jan 2018


Corporate Author : Space and Naval Warfare Systems Center Pacific San Diego United States


Personal Author(s) : Nayfeh,Osama ; Rees,Dave


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1044668.pdf


Report Date : 01 Jan 2018


Pagination or Media Count : 10


Abstract : This technical report demonstrates nanofabrication technology for Niobium heterostructures and nanoscale quantum devices suitable for implementation in novel qubit/quantum memory. In particular electron beam lithography and atomic layer deposition are used. These processes integrate layouts suitable for high frequency microwave/RF excitation of the qubits/quantum memory as well as optically transparent gates in the area of the tunnel junction to enable combined spectroscopy and transport measurements while tuning the energy band at the tunnel junction. These devices are suitable for characterization in a cryo-magneto-optical probe station to access the superconducting regime of operation and that could be used for control and sending of qubit/quantum memory states to remote locations.


Descriptors :   Quantum electronics , QUANTUM HETEROSTRUCTURES , NIOBIUM , lithography , spectroscopy , nanoscale , nanofabrication


Subject Categories : Quantum Theory and Relativity
      Inorganic Chemistry
      Metallurgy and Metallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE