Accession Number : AD1042879


Title :   Innovative Ge Quantum Dot Functional Sensing and Metrology Devices


Descriptive Note : Technical Report,29 May 2015,28 May 2017


Corporate Author : National Chiao Tung University HSINCHU Taiwan


Personal Author(s) : Li, Pei-Wen


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1042879.pdf


Report Date : 21 Aug 2017


Pagination or Media Count : 23


Abstract : This project successfully developed cutting-edge fabrication technologies for (1) the growth and autonomous migration mechanism of Germanium (Ge) quantum dots (QDs) within SiO2, Si3N4, and even Si substrate, (2) the realization of innovative Ge QD/Si coupled-QD (CQD) photodetectors and Ge QD MOS phototransistors for visible to near IR photodetection, (3) the demonstration of direct bandgap photoluminescence from tensile-strained Ge QDs embedded within SiO2 system, and (4) self-organized Ge QD MOSFETs . Our designer Ge QDs embedded within Si-containing layers provide a great promise for Si-based light sources, photodetectors, and transducer amplifiers for Si-based photon/charge sensing, photonics, and even optical interconnections. Si-based photon/charge sensor, photonics, and optical interconnects have shown tremendous promises for replacing tight-packing, large latency electrical wires thanks to their inherent advantages of low energy, high data-rate transmission, and huge data capacity. It is therefore imperative to exploit the co-residency of optical interconnects systems and electronic circuits on a single-chip platform to provide high-performance functional-diversification CMOS Si-integrated circuits. Motivation to employ Ge QDs for Si-based photonics is strong in light of its pseudo-direct gap electronic structure and the compatibility with Si CMOS technology.


Descriptors :   metrology , optoelectronics , QUANTUM DOTS , fabrication , germanium , PHOTODETECTORS , BAND GAPS , PHOTOLUMINESCENCE , silicon , QUANTUM HETEROSTRUCTURES , METALOXIDE SEMICONDUCTOR FIELDEFFECT TRANSISTOR , NANOTECHNOLOGY


Subject Categories : Quantum Theory and Relativity
      Test Facilities, Equipment and Methods
      Electrooptical and Optoelectronic Devices


Distribution Statement : APPROVED FOR PUBLIC RELEASE