Accession Number : AD1038137


Descriptive Note : Technical Report,01 Sep 2016,01 May 2017

Corporate Author : Air Force Research Laboratory, Sensors Directorate WPAFB United States

Personal Author(s) : Bayraktaroglu,Burhan

Full Text :

Report Date : 01 Aug 2017

Pagination or Media Count : 103

Abstract : Gallium oxide (Ga2O3) is a member of the ultra-wide bandgap semiconductor family. Because of its wide bandgap, it is expected to find applications in ultraviolet (UV)-transparent conductive films, UV detectors, and high power electronics and possibly in microwave switching and amplification. Power electronics applications range from on-chip power converters to high voltage rectifiers for electric power transmission lines. High-voltage switching transistors used in these applications are required to have small ON resistance while providing very high blocking voltages in the OFF state. Although there are existing kV-range power switches today, the Ga2O3 devices are expected to increase this capability to the 100s of kV to MV range. This report summarizes the current status of the Ga2O3 technology based on published results on theoretical electronic structure, materials growth, and device fabrication.

Descriptors :   crystal structure , charge carriers , metalsemiconductor junctions , energy bands , compound semiconductors , wide bandgap semiconductors , chemical vapor deposition , complementary metaloxide semiconductors , modules (electronics) , epitaxial growth , CRYSTAL GROWTH , aluminum oxides , GALLIUM COMPOUNDS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE