Accession Number : AD1037844

Title :   Direct Bandgap Group IV Materials

Descriptive Note : Technical Report,25 Jun 2014,24 Jun 2015

Corporate Author : National Taiwan University Taipei Taiwan

Personal Author(s) : Cheng,Hung H

Full Text :

Report Date : 21 Jan 2016

Pagination or Media Count : 6

Abstract : Direct bandgap group IV materials have been long sought for in both academia and industry for the implementation of photonic devices. This proposal works on the fundamental issues and planar photonic devices that are suitable for the integration with the group IV based electronic devices. In this project, we have accomplished (a) direct bandgap group IV materials of GeSn, (b) GeSn-based planar light emitting diode operated at near infrared with direct emission, and (c) the first planar photodetector (Appl. Phys. Lett. 105, 231109 (2014)and references within) This move a step forward toward the monolithic integration of optic and electronic devices in a single chip (all group IV materials). Still, there are two other components (waveguide channel and modulator) that is needed for the all group IV materials optoelectronic and this will be the main targets for next project.

Descriptors :   BAND GAPS , lasers , PHOTONIC DEVICES , light emitting diodes , photodetectors , OPTOELECTRONICS , GROUP 4 ELEMENTS

Subject Categories : Optical Detection and Detectors
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE