Accession Number : AD1035362

Title :   Assessment of Ga2O3 technology

Descriptive Note : Technical Report

Corporate Author : AFRL/RYDD WPAFB United States

Personal Author(s) : Bayraktaroglu,Burhan

Full Text :

Report Date : 15 Sep 2016

Pagination or Media Count : 95

Abstract : Ga2O3 is a member of the ultra-wide bandgap semiconductor family. Because of its wide bandgap, it finds applications in UV-transparent conductive films, UV detectors, and high power electronics and possibly in microwave switching and amplification. Power electronics applications range from on-chip power converters to high voltage rectifiers for electric power transmission lines. High-voltage switching transistors used in these applications are required to have small ON resistance while providing very high blocking voltages in the OFF state. There are already kV-range power switches today. The target for the Ga2O3 devices will be in the 100s of kV to MV range.

Descriptors :   power electronics , metalsemiconductor junctions , energy bands , schottky diodes , wide bandgap semiconductors , chemical vapor deposition , aluminum oxides , band gaps , epitaxial growth , crystal structure , charge carriers , modules (electronics) , high voltage , GALLIUM COMPOUNDS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE