Accession Number : AD1033053


Title :   Layer by Layer Growth of 2D Quantum Superlattices (NBIT III)


Descriptive Note : Technical Report,28 Aug 2013,17 Oct 2016


Corporate Author : Cornell University ITHACA United States


Personal Author(s) : Park, Jiwoong


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1033053.pdf


Report Date : 28 Feb 2017


Pagination or Media Count : 11


Abstract : In this report, we describe our progress in new synthesis, fabrication and characterization techniques for building quantum superlatticies using2D materials as the building blocks. Specifically, we develop methods that allow i) large-scale growth of aligned-crystal graphene and high quality TMDs monolayers such as MoS2 and WS2; ii) wafer-scale atomic layer assembly method for building atomically-precise superlattice and heterostructures, iii) lateral and clean patterning of 2D materials for atomically-thin circuitry and iv) novel physical properties in both 2D-onlyand 2D/organic hybrid systems. The development here realizes a set of powerful tools that would enable novel quantum structures with high precision and flexibility beyond conventional methods. Moreover, it provides the solutions for current major barrier for 2D materials (e.g., limited scalability) while preserving their unique properties, which provide the key foundation for leading these new materials into interdisciplinary and industrial applications. This work is funded by the AFOSR grant (FA2386-13-1-4118) 'Layer-by-Layer Growth of 2D Quantum Superlattices'.


Descriptors :   materials processing , superlattices , graphene , crystals , HETEROJUNCTIONS , band structures , absorption , electronics , films , spectra , semiconductors


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE