Accession Number : AD1033051


Title :   In-situ Manipulation and Imaging of Switchable Two-dimensional Electron Gas at Oxide Heterointerfaces


Descriptive Note : Technical Report,13 Aug 2015,12 Aug 2016


Corporate Author : UNIVERSITY OF WISCONSIN SYSTEM MADISON United States


Personal Author(s) : Oh,Sang H ; Eom,Chang-Beom


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1033051.pdf


Report Date : 30 Nov 2016


Pagination or Media Count : 8


Abstract : The recent discovery of a two-dimensional electron gas (2DEG) at the interface between insulating perovskite oxides SrTiO3 and LaAlO3 was made possible by advances in atomic layer controlled growth. These advances have led to the creation of atomically-abrupt interfaces between novel complex oxide materials. It has been demonstrated that the conducting layer can be localized within a few nm of the interface, and that the carrier concentration can be altered with an electric field and/or lattice strain. We have created a strong interdisciplinary collaboration with the expertise in US and Korea required to attack the fundamental issues in this exciting, emerging field. This project is a collaborative effort to explore the fundamental scientific issues of the growth and novel properties of oxide hetero-interfaces. Specific tasks are (1) atomic layer epitaxial growth and characterization of switchable two-dimensional oxide hetero-interface materials; (2) direct imaging of charge carrier densities by inline holography and electrical transport of 2DEG oxide hetero interfaces. Our goal is to achieve an atomic-level understanding of the growth and characteristics of oxide hetero-interfaces, with advanced properties and new functionalities.


Descriptors :   electron gas , oxides , atomic layer epitaxy , holography


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE