Accession Number : AD1032193

Title :   MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

Descriptive Note : Technical Report


Personal Author(s) : Wang,Christine A ; Schwarz,Benedikt ; Siriani,Dominic F ; Missaggia,Leo J ; Connors,Michael K ; Mansuripur,T S ; Calawa,Daniel R ; McNulty,Daniel ; Nickerson,M ; Donnelly,J P ; Capasso,F

Full Text :

Report Date : 01 Feb 2017

Pagination or Media Count : 31

Abstract : The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials properties is of critical importance for continuing improvements in QCL performance. We present an overview of the growth challenges of these complex QCL structures; describe the metalorganic vapor phase epitaxy (MOVPE) growth of AlInAs/GaInAs/InP structures and QCLs; discuss materials characteristics that impact QCL performance; and investigate various QCL structure modifications and their effects on QCL performance. We demonstrate uncoated buried heterostructure QCLs emitting at 9.5 m operate continuous wave with 1.32 W output power and maximum wall plug efficiency (WPE) of 6.8%. This WPE is more than 50% greater than previously reported WPEs for unstrained QCLs emitting at about the same wavelength and only 30% below strained QCLs emitting in this range.

Descriptors :   quantum cascade lasers , current density , electron microscopy , heterojunctions , microscopy , band structures , conduction bands , diffraction , energy bands , scattering , epitaxial growth , quantum wells , spectra , semiconductor devices

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE