Accession Number : AD1026641


Title :   Nonlinear Elasticity of Doped Semiconductors


Descriptive Note : Technical Report,12 Nov 2015,12 Nov 2016


Corporate Author : Michigan State University East Lansing United States


Personal Author(s) : Dykman,Mark ; Moskovtsev,Kirill


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1026641.pdf


Report Date : 01 Feb 2017


Pagination or Media Count : 29


Abstract : In this report Michigan State University (MSU) provides the results of studying the temperature dependence of thefrequency shift and the amplitude dependence of the vibration frequency for 100 length extension modes in n-dopedsilicon (Si) microelectromechanical (MEMS) resonators. MSU also has started a comparison with the experimental datafrom the Stanford University group. The obtained results show that the goal of the project has been reached. MSU hasfull quantitative theory of the temperature- and density-dependent change of the vibration frequency of eigenmodes inresonators and of their dependence on the vibration amplitude.


Descriptors :   SEMICONDUCTORS , MICROELECTROMECHANICAL SYSTEMS , RESONATORS , frequency shift , free energy


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE