Accession Number : AD1026641

Title :   Nonlinear Elasticity of Doped Semiconductors

Descriptive Note : Technical Report,12 Nov 2015,12 Nov 2016

Corporate Author : Michigan State University East Lansing United States

Personal Author(s) : Dykman,Mark ; Moskovtsev,Kirill

Full Text :

Report Date : 01 Feb 2017

Pagination or Media Count : 29

Abstract : In this report Michigan State University (MSU) provides the results of studying the temperature dependence of thefrequency shift and the amplitude dependence of the vibration frequency for 100 length extension modes in n-dopedsilicon (Si) microelectromechanical (MEMS) resonators. MSU also has started a comparison with the experimental datafrom the Stanford University group. The obtained results show that the goal of the project has been reached. MSU hasfull quantitative theory of the temperature- and density-dependent change of the vibration frequency of eigenmodes inresonators and of their dependence on the vibration amplitude.

Descriptors :   SEMICONDUCTORS , MICROELECTROMECHANICAL SYSTEMS , RESONATORS , frequency shift , free energy

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE