Accession Number : AD1025395

Title :   Simulations of Proton Implantation in Silicon Carbide (SiC)

Descriptive Note : Conference Paper

Corporate Author : Case Western Reserve University Cleveland United States

Personal Author(s) : McCandless,Jonathan P ; Chen,Hailong ; Feng,Philip X-L

Full Text :

Report Date : 31 Mar 2016

Pagination or Media Count : 3

Abstract : We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in micromachined silicon carbide (SiC) structures and devices. In this technical digest, we briefly present a computer simulation study on the effects of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon(Si) substrate, and explore the ion implantation conditions that are relevant to experimental radiation of SiC layers.

Descriptors :   computer simulations , ion implantation , protons , silicon , substrates , RADIATION EFFECTS , wide bandgap semiconductors , sputtering

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE