Accession Number : AD1024731


Title :   Characterization of an Mg-implanted GaN p-i-n Diode


Descriptive Note : Conference Paper


Corporate Author : Naval Research Laboratory Washington United States


Personal Author(s) : Anderson,Travis J ; Greenlee,Jordan D ; Feigelson,Boris N ; Hobart,Karl D ; Kub,Francis J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1024731.pdf


Report Date : 31 Mar 2016


Pagination or Media Count : 3


Abstract : A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.


Descriptors :   ion implantation , diodes , gallium nitrides


Subject Categories : Solid State Physics
      Inorganic Chemistry
      Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE