Accession Number : AD1024729


Title :   Vertical GaN Devices for Power Electronics in Extreme Environments


Descriptive Note : Conference Paper


Corporate Author : Avogy Inc. San Jose United States


Personal Author(s) : Kizilyalli,Isik C ; Kaplar,Robert J ; Aktas,O ; Armstrong,A M ; King,M P ; Dickerson,J R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1024729.pdf


Report Date : 31 Mar 2016


Pagination or Media Count : 4


Abstract : There is great interest in wide band-gap semiconductor devices and most recently in monolithic GaN structures for power electronics applications. In this paper vertical p-n diodes and transistors fabricated on pseudo bulk low defect density (104 to106 cm-2) GaN substrates are discussed. Homoepitaxial MOCVD growth of GaN on its native substrate and being able to control doping has allowed the realization of vertical device architectures with drift layer thicknesses of 6 to 40 micron and net carrier electron concentrations of 2x1015 to 2.5x1016 cm-3. This parameter range is suitable for applications requiring breakdown voltages of 600V to 5kV and current levels to 400Awith a proper edge termination strategy. Vertical GaN devices are studied under cryogenic conditions, radiation, and ruggedness performance under repetitive avalanche stress.


Descriptors :   power electronics , pn junction diodes , field effect transistors , stress tests , wide bandgap semiconductors , temperature coefficients , diodes , electron mobility , ELECTRICAL RESISTANCE , gallium nitrides


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE