Accession Number : AD1020599


Title :   Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors


Descriptive Note : Technical Report


Corporate Author : North Carolina A and T State University Greensboro United States


Personal Author(s) : Ojha,Sai K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1020599.pdf


Report Date : 01 Jun 2015


Pagination or Media Count : 157


Abstract : Semiconductor nanowires are currently attracting great interest due to their unique optical and electrical properties with great prospects for potential optoelectronic device applications at nanoscale.


Descriptors :   nanowires , MOLECULAR BEAM EPITAXY , PHOTODETECTION , optical properties , semiconductors , substrates , optics , electronics industry


Subject Categories : Electrical and Electronic Equipment
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE