Accession Number : AD1018179

Title :   Radiation Effects in III-V Nanowire Devices

Descriptive Note : Technical Report,23 May 2011,31 Dec 2014

Corporate Author : Defense Threat Reduction Agency Fort Belvoir United States

Personal Author(s) : Brueck,Steven R

Full Text :

Report Date : 01 Sep 2016

Pagination or Media Count : 44

Abstract : The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) by focused-ion beam (FIB) etching and chemical oxidation is reported. The device has a semiconductor-on-insulator structure with an n -GaAs/Al2O3 layer stack implemented by lateral hydrolyzation oxidation. A 2 micron-long channel having an effective cross section 70 x 220 nm is directly fabricated into the n -GaAs layer by FIB etching. The channel is electronically isolated from the substrate by the Al2O3 layer and is effectively an in-plane NW epitaxially connected to the source and drain for a planar MOSFET within a single layer. The NW channel is surrounded by an 15 nm-thick gate oxide.

Descriptors :   Nanowires , Oxidation , Reactive ion etching , metal oxide , transistors , fabrication , ion beams , oxides

Distribution Statement : APPROVED FOR PUBLIC RELEASE