Accession Number : AD1014176


Title :   Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors


Descriptive Note : Technical Report,01 Apr 2010,31 Mar 2014


Corporate Author : Department of Electrical Engineering, University of South Carolina Columbia United States


Personal Author(s) : Sudarshan , Tangali S


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1014176.pdf


Report Date : 02 Aug 2016


Pagination or Media Count : 25


Abstract : Research is conducted to investigate the epitaxial growth of thick films using halogenated precursors: chlorine-based dichlorosilane (DCS) and fluorine-based tetrafluorosilane (TFS). TFS (SiF4) has been utilized for the first time to completely eliminate Si droplet formation and suppress parasitic deposition, thus enabling high quality SiC growth. Ni/4H-SiC Schottky diodes fabricated on TFS-grown epilayers show superior performance with high barrier heights and low ideality factors.


Descriptors :   semiconductor devices , Silicon Carbides , EPITAXIAL GROWTH , Chemical Vapor Deposition , HALOGENATION , high power , RELIABILITY ELECTRONICS , synthesis chemistry , doping , solid state electronics , substrates


Distribution Statement : APPROVED FOR PUBLIC RELEASE