Accession Number : AD1011801


Title :   Study of Charge Transport in Vertically Aligned Nitride Nanowire Based Core Shell P-I-N Junctions


Descriptive Note : Technical Report,01 Nov 2013,30 Jun 2015


Corporate Author : University of Maryland Baltimore United States


Personal Author(s) : Krylyuk,Sergiy ; Debnath,Ratan ; Ha,JongYoon ; Davydov,Albert V ; King,Matthew ; Motayed,Abhishek


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1011801.pdf


Report Date : 01 Jul 2016


Pagination or Media Count : 17


Abstract : We investigated charge transport in large-area arrays of vertically-aligned, gallium nitride (GaN) based core-shell p-I-n (PIN) diodes. The processed design can potentially produce photodetectors with efficiencies comparable to or better than traditional photomultiplier tubes (PMYs) with significant reduction in Size, Weight, and Power (SWAP). Our approach combines the precision and scability of top-down processing with the enhanced material quality obtained through selective epitaxy to realize these structures. Vertically-aligned, radial core-shell architecture allows for significant defect reduction, strain engineering, polarity controlled growth, and transformative new device designs.


Descriptors :   photodetectors , pin diodes , nanowires


Distribution Statement : APPROVED FOR PUBLIC RELEASE