Accession Number : AD1011801

Title :   Study of Charge Transport in Vertically Aligned Nitride Nanowire Based Core Shell P-I-N Junctions

Descriptive Note : Technical Report,01 Nov 2013,30 Jun 2015

Corporate Author : University of Maryland Baltimore United States

Personal Author(s) : Krylyuk,Sergiy ; Debnath,Ratan ; Ha,JongYoon ; Davydov,Albert V ; King,Matthew ; Motayed,Abhishek

Full Text :

Report Date : 01 Jul 2016

Pagination or Media Count : 17

Abstract : We investigated charge transport in large-area arrays of vertically-aligned, gallium nitride (GaN) based core-shell p-I-n (PIN) diodes. The processed design can potentially produce photodetectors with efficiencies comparable to or better than traditional photomultiplier tubes (PMYs) with significant reduction in Size, Weight, and Power (SWAP). Our approach combines the precision and scability of top-down processing with the enhanced material quality obtained through selective epitaxy to realize these structures. Vertically-aligned, radial core-shell architecture allows for significant defect reduction, strain engineering, polarity controlled growth, and transformative new device designs.

Descriptors :   photodetectors , pin diodes , nanowires

Distribution Statement : APPROVED FOR PUBLIC RELEASE