Accession Number : AD1010691


Title :   Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates


Descriptive Note : Journal Article


Corporate Author : Massachusetts Institute of Technology Cambridge United States


Personal Author(s) : Guerrera,S A ; Akinwande,A I


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1010691.pdf


Report Date : 19 Aug 2016


Pagination or Media Count : 11


Abstract : We developed a fabrication process for embedding a dense array (108 cm2) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 m tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm2), uniform, and long lifetime (100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be 4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).


Descriptors :   field emission , nanotechnology , current limiters , chemical vapor deposition , electric fields , electron microscopes , electrostatic fields , fabrication , oxides , electron microscopy , electrons


Distribution Statement : APPROVED FOR PUBLIC RELEASE