Accession Number : AD1010381


Title :   Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms


Descriptive Note : Technical Report,01 Oct 2014,31 Jul 2015


Corporate Author : HARVARD UNIV CAMBRIDGE MA CAMBRIDGE United States


Personal Author(s) : Ramanathan,Shriram


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1010381.pdf


Report Date : 21 Mar 2016


Pagination or Media Count : 16


Abstract : The overarching goals of the research project include advancing our understanding of strong correlation effects in Mott semiconductors and their response to electric fields. This is relevant to their eventual use as advanced semiconductors in microwave devices or high speed transistors where collective effects are exploited to design switches. The report presents our progress in studying electron transport mechanisms in doped SmNiO3. Upon electron doping via hydrogenation, a strongly correlated Mott insulating state is formed in the nickelate. It is therefore important to understand the carrier transport mechanism in the doped nickelate where carriers are strongly localized. We present a detailed study of carrier transport as a function of temperature along with description of the mechanisms in a strongly localized picture characteristic of Mott insulators.


Descriptors :   Mott insulators , transistors , transport properties , doping , hydrogenation


Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE