Accession Number : AD1009567

Title :   Complementary Metal-Oxide-Silicon (CMOS)-Memristor Hybrid Nanoelectronics for Advanced Encryption Standard (AES) Encryption

Descriptive Note : Technical Report,01 Nov 2010,31 Dec 2015

Corporate Author : SUNY Polytechnic Institute Albany United States

Personal Author(s) : Cady,Nathaniel C

Full Text :

Report Date : 01 Apr 2016

Pagination or Media Count : 49

Abstract : The objective of this effort was to develop and demonstrate CMOS-memristor hybrid nanoelectronic circuits produced in a standard CMOS foundry setting. Specifically, memristor nanodevices optimized for performance and reliability were developed and integrated with CMOS circuitry to establish an efficient hybrid nanoelectronic computing module for Advanced Encryption Standard (AES). This new hybrid CMOS/memristor technology will be available for future novel, emerging unconventional architecture with size, weight and power constraints. The deliverables under this effort were several dozen chips fabricated using the standard 10LPe (65 nm) CMOS transistor node integrated with the memristors without leaving the CMOS foundry setting.

Descriptors :   MOLECULAR ELECTRONICS , Chips (Electronics) , COMPLEMENTARY METALOXIDE SEMICONDUCTORS , integrated circuits , nanoelectronics , fabrication , semiconductor devices , circuit analysis

Distribution Statement : APPROVED FOR PUBLIC RELEASE