Accession Number : AD1007947


Title :   Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth


Descriptive Note : Technical Report,01 Jun 2015,31 Aug 2015


Corporate Author : US Army Research Laboratory Adelphi United States


Personal Author(s) : Chen, Andrew ; Zakar,Eugene ; Burke,Robert


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1007947.pdf


Report Date : 01 Feb 2016


Pagination or Media Count : 18


Abstract : Co-sputtered copper (Cu)-nickel (Ni) alloys with layered thin-film ratios of 6:1, 4:1, and 3:1 were developed for use as a catalyst for the growth of graphene. A design of experiments was initiated with 3 tasks to complete: 1) metal preparation designed to achieve preferred (111) oriented films, 2) alloying of the layered films, and 3) the synthesis of AB-stacked quality bilayer graphene via low-pressure chemical vapor deposition (LPCVD). This report covers the analysis of the first 2 tasks by revealing the detailed morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen (H2)/argon (Ar) gas ratio, and pressure. These variables are expected to have a major impact on the growth of graphene for different Cu-Ni thin-film concentrations.


Descriptors :   THIN FILMS , GRAPHENE , COPPER , NICKEL , GROWTH , MATERIALS , SYNTHESIS , DEPOSITION


Distribution Statement : APPROVED FOR PUBLIC RELEASE