Accession Number : AD1004413


Title :   Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier


Descriptive Note : Journal Article


Corporate Author : National Institute of Standards and Technology Boulder United States


Personal Author(s) : Oh,S ; Cicak,K ; McDermott,R ; Cooper,K B ; Osborn,K D ; Simmonds,R W ; Steffen,M ; Martinis,J M ; Pappas,D P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1004413.pdf


Report Date : 30 Mar 2016


Pagination or Media Count : 20


Abstract : We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.


Distribution Statement : APPROVED FOR PUBLIC RELEASE