Accession Number : AD1001326


Title :   Depleted Nanocrystal-Oxide Heterojunctions for High-Sensitivity Infrared Detection


Descriptive Note : Technical Report,01 Sep 2014,31 May 2015


Corporate Author : West Virginia University Morgantown United States


Personal Author(s) : Cao,Xian-An


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/1001326.pdf


Report Date : 28 Aug 2015


Pagination or Media Count : 29


Abstract : The goal of this project is to explore a new IR photodetector architecture based on a depleted ZnO/PbS QD heterojunction. Colloidal PbSQDs with the first excitonic absorption peak from 850-1050 nm were synthesized, and ZnO thin films were prepared by two different methods: thermal evaporation and solution processing. Devices with an optimized ZnO/PhS QD structure showed ultralow dark current, fast response, and a photocurrent on/off ratio greater than 10000. A comparative study of ZnO or PhS QD single-layer structures proved that the optical response arises from charge separation at a depleted junction forming between ZnO and PbS QDs. However, poor charge transport through the solution-processed ZnO and QD layers limits the photoconductive gain and quantum efficiency of devices.


Descriptors :   HETEROJUNCTIONS , infrared detection , PHOTODETECTORS , QUANTUM DOTS


Distribution Statement : APPROVED FOR PUBLIC RELEASE