Accession Number : AD1000558

Title :   Reconfigurable Electronics and Non-Volatile Memory Research

Descriptive Note : Technical Report,04 Sep 2008,30 Oct 2015

Corporate Author : Boise State University, Department of Electrical and Computer Engineering Boise United States

Personal Author(s) : Campbell,Kristy A

Full Text :

Report Date : 10 Nov 2015

Pagination or Media Count : 100

Abstract : The purpose of this research was to investigate reconfigurable electronics and non-volatile memory materials and devices. The primary focus of this work was on device types such as ion-conducting resistive, zero-field splitting memory theory (atomic or molecular memory devices that operate based on a specific quantum mechanical property referred to as zero-field splitting of the atoms/molecules held within a material matrix), as well as multi-state chalcogenide devices based on a layered chalcogenide material structure. Devices were fabricated as single elements or as arrays of devices in order to test their performance. Materials characterization was used to aid in an understanding of device operation and to ultimately improve device performance through better material selection.


Distribution Statement : APPROVED FOR PUBLIC RELEASE