Accession Number : AD0865667
Title : Field Dependent Electron Drift Velocity for GaAs Calculated by a Monte Carlo Method.
Descriptive Note : Teknisk notat,
Corporate Author : NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT KJELLER
Personal Author(s) : Aas, Einar Johan
Report Date : 13 AUG 1969
Pagination or Media Count : 21
Abstract : The field dependent electron drift velocity in GaAs has been calculated on the basis of a Monte Carlo simulation of electron motion in k-space. Three scattering processes have been taken into account. These include interactions with longitudinal polar optical mode phonons, non-polar optical mode phonons and acoustical phonons. Numerical calculations including accuracy estimates have been performed for lattice temperatures in the range 200 - 400 degrees K. The results show the threshold field to be nearly temperature independent. The negative differential mobility increases with decreasing temperature, while the peak to valley ratio is nearly constant. An outline is given of work being done in order to include scattering by neutral and ionized impurities. This will make calculations possible for temperatures down to below liquid nitrogen and impurity concentrations up to 10 to the 17th power/cc. (Author)
Descriptors : , (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DIODES), (*GALLIUM ARSENIDES, ELECTRICAL CONDUCTIVITY), (*ELECTRONS, MOBILITY), BAND THEORY OF SOLIDS, MONTE CARLO METHOD, PHONONS, NORWAY.
Subject Categories : SOLID STATE PHYSICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE