Accession Number : AD0712551
Title : GEISHA SEMICONDUCTOR RELIABILITY STUDIES. A PORTION OF CHAIR-GEISHA.
Descriptive Note : Semi-annual technical rept. no. 1, 1 Feb-31 Jul 70,
Corporate Author : WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
Personal Author(s) : Szedon,John R. ; Yu,Karl K.
Report Date : 29 SEP 1970
Pagination or Media Count : 24
Abstract : Gate controlled diodes were fabricated with silicon dioxide and silicon nitride for the gate insulators. Total leakage current in these diodes was resolved into three components: the bulk current, the surface generation current and the field-induced surface junction current. Investigation shows that the intrinsic carrier concentration controls the temperature dependence of the magnitudes of these current components as expected. Actual GEISHA target design has been completed. Worst case analysis of the target, based on the results obtained from the gate controlled diodes, predicts maximum leakage current of less than 300 microamperes at 150C and 200 V reverse bias, using non-epitaxial material. Preliminary irradiations were performed on gate-controlled diodes with thermal oxide gates. Polyimide coated units show no net charge build up in the insulators after irradiation. The coated units also show less surface leakage current than the non-coated units both before and after irradiation. These results indicate that the inorganic coating is suitable for radiation passivation, if compatible with the rest of the system. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), (*SEMICONDUCTORS, DAMAGE), SEMICONDUCTOR DIODES, GATES(CIRCUITS), SILICON DIOXIDE, SILICON COMPOUNDS, NITRIDES, IONIZATION, (U)IONIZATION
Subject Categories : ELECTRICAL AND ELECTRONIC EQUIPMENT
SOLID STATE PHYSICS
Distribution Statement : APPROVED FOR PUBLIC RELEASE