Accession Number : AD0479256
Title : SEMICONDUCTOR LASER ARRAY TECHNIQUES (SEMLAT) (ENGINEERING CHANGE).
Descriptive Note : Final rept.,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY
Personal Author(s) : Brouillette, W. ; Collins, N. E. ; Grubel, R. O. ; Kim, C. S. ; Raillard, H.
Report Date : FEB 1966
Pagination or Media Count : 27
Abstract : This report is on the Semiconductor Laser Array Program. The report describes the array amplification test performed. Feasibility of coherent spatial addition of semiconductor laser array element emission has been demonstrated with a two-diode array scheme. Description of a coating technique that reduces the internal reflection at diode end faces is given. The resulting diode threshold increases and the increased internal gain of diodes are reported. The report also describes the investigation made to extend the array amplification scheme to a cascaded array system. All the components necessary for the latter scheme are described and have been tested. (Author)
Descriptors : *SEMICONDUCTORS), (*LASERS, SEMICONDUCTOR DIODES, LIGHT PULSES, GAIN, REFLECTION, INTERFERENCE, GALLIUM ALLOYS, ARSENIDES, COATINGS.
Subject Categories : ELECTRICAL AND ELECTRONIC EQUIPMENT
LASERS AND MASERS
Distribution Statement : APPROVED FOR PUBLIC RELEASE