Accession Number : AD0478538
Title : GAAS LASER DIODES.
Descriptive Note : Final rept. 1 Jul 64-30 Jun 65,
Corporate Author : KORAD CORP SANTA MONICA CA
Personal Author(s) : Sehr, R. A. ; Rundle, W. J.
Report Date : JAN 1966
Pagination or Media Count : 30
Abstract : Refinements in the experimental technique for growing p-n junctions from liquid solution resulted in highly uniform and dislocation-free n-layers on p-substrates. High pressure diffused laser diodes were fabricated with thresholds between 50 and 70 amperes at 300 degrees K, and typical power outputs of two watts with 50 nsec pulses and a repetition rate of 1000 pps. Some lasers, mounted on special headers containing a pulse transformer, were operated at 8000 pps with 100 nsec pulses producing a beam of 1.5 watt optical peak power within a beam angle of 12 degress. (Author)
Descriptors : *ARSENIC ALLOYS), *SEMICONDUCTOR DIODES), (*GALLIUM ALLOYS, (*LASERS, CRYSTAL GROWTH, PRESSURE, DIFFUSION, SOLUTIONS(MIXTURES), DOPING, ELECTRICAL PROPERTIES, ELECTRICAL RESISTANCE, HEATING, ELECTROMAGNETIC PULSES.
Subject Categories : LASERS AND MASERS
Distribution Statement : APPROVED FOR PUBLIC RELEASE