Accession Number : AD0478315


Title :   BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS.


Descriptive Note : Quarterly rept. no. 2, 1 Oct 65-31 Dec 66,


Corporate Author : MSI ELECTRONICS INC RICHMOND HILL N Y


Personal Author(s) : Scaringella ,D ; Shulman ,C ; Denker,S


Report Date : 15 Jan 1966


Pagination or Media Count : 16


Abstract : Hot carrier detectors utilizing N(+) on N and N(+) on N on N(+) designs exhibited sensitivities of the order of -35 DBM for junction diameters of 0.001 inches diameter. Devices fabricated with a steep thermal gradient exhibited enhancements of 2 to 3 DB at a sensitivity of approximately -40 DBM. The model for enhancement suggests a Schottky Barrier metal-semiconductor design to produce a depletion region under the metal contact through the choice of metals and semiconductor resistivities. (Author)


Descriptors :   *VIDEO AMPLIFIERS , *DEMODULATORS , X BAND , DETECTORS , THERMOELECTRICITY , IMPEDANCE MATCHING , GOLD , SILICON , DOPING , EPITAXIAL GROWTH , RADIOFREQUENCY POWER , VOLTAGE , ELECTRICAL RESISTANCE , CHARGE CARRIERS


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE